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FGPF30N45T 450V, 30A PDP Trench IGBT
December 2007
FGPF30N45T
450V, 30A PDP Trench IGBT
Features
* High Current Capability * Low saturation voltage: VCE(sat) =1.55V @ IC = 30A * High input impedance * Fast switching * RoHS complaint
tm
General Description
Using Novel Trench IGBT Technology, Fairchild's new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
Applications
* PDP System
C
TO-220F
1 1.Gate 2.Collector 3.Emitter
G
E
Absolute Maximum Ratings
Symbol
VCES VGES ICM (1) PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = @ TC = 25oC 25oC
Ratings
450 30 120 50.4 20.1 -55 to +150 -55 to +150 300
Units
V V A W W
oC oC o
@ TC = 100oC
C
Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * Ic_pluse limited by max Tj
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
2.48 62.5
Units
o
C/W
oC/W
(c)2007 Fairchild Semiconductor Corporation
1
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FGPF30N45T Rev. A
FGPF30N45T 450V, 30A PDP Trench IGBT
Package Marking and Ordering Information
Device Marking
FGPF30N45T
Device
FGFP30N45TTU
Package
TO-220F
Packaging Type
Rail / Tube
Max Qty Qty per Tube
50ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES TJ ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
450 -
0.5 -
100 400
V V/oC A nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 20A, VGE = 15V IC = 30A, VGE = 15V IC = 30A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 1610 88 68 pF pF pF 3.0 4.5 1.35 1.55 1.53 5.5 1.6 V V V
Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 30A, VGE = 15V VCC = 200V, IC = 30A, RG = 15, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 30A, RG = 15, VGE = 15V, Resistive Load, TC = 25oC 19 57 119 220 20 60 122 265 73 11 33 330 ns ns ns ns ns ns ns ns nC nC nC
FGPF30N45T Rev. A
2
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FGPF30N45T 450V, 30A PDP Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
120
TC = 25 C
o
Figure 2. Typical Output Characteristics
120
TC = 125 C
o
20V 15V
20V 15V 12V 10V
Collector Current, IC [A]
12V
10V
80
Collector Current, IC [A]
80
VGE = 8V
40
VGE = 8V
40
0 0 2 4 Collector-Emitter Voltage, VCE [V] 6
0 0 2 4 Collector-Emitter Voltage, VCE [V] 6
Figure 3. Typical Saturation Voltage Characteristics
120
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
120
Common Emitter VCE = 20V
Collector Current, IC [A]
TC = 25 C
Collector Current, IC [A]
o
TC = 25 C TC = 125 C
o
o
80
TC = 125 C
o
80
40
40
0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4
0 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
1.8
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = 25 C
o
1.6
30A
16
12
1.4
20A
8
1.2
IC = 10A
4
20A IC = 10A
30A
1.0 25
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGPF30N45T Rev. A
3
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FGPF30N45T 450V, 30A PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Figure 8. Capacitance Characteristics
10000
Cies
Collector-Emitter Voltage, VCE [V]
16
Capacitance [pF]
Coes
1000
Cres
12
8
20A 30A IC = 10A
100
Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
4
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
10 1 10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter TC = 25 C
o
Figure 10. SOA Characteristics
500
IC MAX (Pulse) 10s
Gate-Emitter Voltage, VGE [V]
12
VCC = 100V
100
Collector Current, Ic [A]
200V
100s
9
10
1ms 10 ms
6
1 IC MAX (Continuous)
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
3
0.1
DC Operation
0 0 20 40 60 Gate Charge, Qg [nC] 80
0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000
Figure 11. Turn-on Characteristics vs. Gate Resistance
500
Figure 12. Turn-off Characteristics vs. Gate Resistance
1000
tf
100
Switching Time [ns]
Switching Time [ns]
td(off)
tr
100
Common Emitter VCC = 200V, VGE = 15V IC = 30A TC = 25 C
o o
10
td(on)
Common Emitter VCC = 200V, VGE = 15V IC = 30A TC = 25 C TC = 125 C
o o
1 0 10 20 30 40 50
Gate Resistance, RG []
10 0 10 20
TC = 125 C
30
40
50
Gate Resistance, RG []
FGPF30N45T Rev. A
4
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FGPF30N45T 450V, 30A PDP Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Collector Current
200
Common Emitter VGE = 15V, RG = 15 TC = 25 C
o o
Figure 14. Turn-off Characteristics vs. Collector Current
500
100
Switching Time [ns]
Switching Time [ns]
TC = 125 C
tf
100
td(off)
tr
Common Emitter VGE = 15V, RG = 15 TC = 25 C TC = 125 C
o o
td(on)
10 5 10 15 20 25 30
Collector Current, IC [A]
10 5 10 15 20 25 30
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
1000
Figure 16. Switching Loss vs.Gate Resistance
1000
Switching Loss [J]
Eoff
Switching Loss [J]
Eoff
100
Eon
100
Eon Common Emitter VCC = 200V, VGE = 15V IC = 30A TC = 25 C TC = 125 C
o o
10
Common Emitter VGE = 15V, RG = 15 TC = 25 C TC = 125 C
o o
10
1
0
10
20
30
40
50
5
10
20
Collector Current, IC [A]
30
Gate Resistance, RG []
Figure 17. Transient Thermal Impedance of IGBT
10
Thermal Response [Zthjc]
0.5
1
0.2 0.1 0.05 0.02 0.01
PDM t1 t2
0.1
0.01
single pulse
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
FGPF30N45T Rev. A
5
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FGPF30N45T 450V, 30A PDP Trench IGBT
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FGPF30N45T Rev. A
6
15.87 0.20
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FGPF30N45T 450V, 30A PDP Trench IGBT
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM
Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
FGPF30N45T Rev. A
7
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